| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a guard groove is uniformly filled with semiconductor filling. SOLUTION: Four corners of a guard groove 22b in the shape of rectangular ring are made perpendicularly cross one and another, and a rounded outer auxiliary diffusion region 35 and an inner auxiliary diffusion region 34 are connected to the four corners. Since it is not necessary to round the guard groove 22b, all the surface azimuths of the silicon monocrystal exposed within a guard groove 22a are made into ä100}. Therefore, epitaxial growth within the guard groove 22a is uniformly performed and filled in a non-defective guard region 23b. COPYRIGHT: (C)2004,JPO |
