NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that can reduce the variations of the erasing or writing thresholds.

SOLUTION: This nonvolatile semiconductor memory device has several nonvolatile memory cells connected in series and capable of electrical rewriting, and a selective gate transistors series connected to the series connected memory cells. The memory cells neighboring the selective gate transistor are dummy cells not used for storing the data and biased to the same voltage as the other memory cells when erasing the data.

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