发明名称 |
Semiconductor energy detector |
摘要 |
A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.
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申请公布号 |
US6724062(B2) |
申请公布日期 |
2004.04.20 |
申请号 |
US20010886110 |
申请日期 |
2001.06.22 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
AKAHORI HIROSHI;SUZUKI HISANORI;MIYAGUCHI KAZUHISA;MURAMATSU MASAHARU;YAMAMOTO KOEI |
分类号 |
G01T1/24;H01L27/148;H01L29/768;H01L31/00;H04N3/14;(IPC1-7):H01L31/00 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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