发明名称 |
Method for stabilizing oxide-semiconductor interface by using group 5 element and stabilized semiconductor |
摘要 |
The present invention provides a method for stabilizing an oxide-semiconductor interface, which is free from the formation of an interface layer (reactive layer) between a semiconductor and an interface oxide and which thereby allows satisfactory exhibition of performance capabilities of a functional oxide and achievement of the stability of oxide-semiconductor interface, yet independent of temperature; it also provides a stabilized semiconductor.
|
申请公布号 |
US6723164(B1) |
申请公布日期 |
2004.04.20 |
申请号 |
US20020129983 |
申请日期 |
2002.09.24 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY CORPORATION;NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
CHIKYO TOYOHIRO;YOSHIMOTO MAMORU |
分类号 |
H01L21/316;H01L21/8242;H01L27/10;H01L27/108;H01L29/51;(IPC1-7):C30B25/18 |
主分类号 |
H01L21/316 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|