| 摘要 |
PURPOSE: A planarization method of a semiconductor device is provided to be capable of preventing dishing, erosion, and moat damage for securing the performance of the semiconductor device. CONSTITUTION: An insulation layer(3) is formed on a semiconductor substrate(1). A trench and contact hole are formed on the resultant structure by selectively etching the insulation layer. A barrier is formed along the topology of the resultant structure. A metal layer(11) is formed on the entire surface of the resultant structure for completely filling the trench and contact hole. A fluid jetting process is performed on the resultant structure. A cooling process is performed on the resultant structure for transforming the fluid into a freezing layer(13). A CMP(Chemical Mechanical Polishing) process is performed on the resultant structure. Preferably, deionized water is used as the fluid. Preferably, the CMP process is performed under the temperature of 0, or less.
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