| 摘要 |
PURPOSE: A method for etching an anti-reflective coating is provided to be capable of forming a metal line having a predetermined CD(Critical Dimension) of 0.01 m, or less, and restraining a micro-bridge phenomenon. CONSTITUTION: A metal layer and an anti-reflective coating are sequentially formed on a semiconductor substrate(S100). A DUV(Deep Ultra Violet) photoresist pattern is formed on the anti-reflective coating for defining a metal line(S102). The anti-reflective coating and the metal layer are selectively etched by in-situ using etching gas mainly containing Cl2 gas(S104). Preferably, the etching gas further contains Ar and CHF3. Preferably, the Cl2 etching gas is in the range of 40-90 sccm. Preferably, the anti-reflective coating is made of silicon oxide nitride.
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