| 摘要 |
A method for manufacturing a dislocation-free silicon single crystal, includes the steps of preparing a silicon seed crystal formed of a dislocation-free single crystal having a boron concentration of 1x1018 atoms/cm3 or more, preparing a silicon melt having a boron concentration which differs from that of the seed crystal by 7x1018 atoms/cm3 or less, and bringing the seed crystal into contact with the silicon melt to grow the silicon single crystal.
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