发明名称 SPUTTERING FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sputtering film deposition system in which, as for film deposition on a film depositing substrate, the film thickness is correctly controlled in continuous film deposition without stopping the film deposition one or more times in the process of the film deposition, and actual film deposition working is performed so as to obtain an objective film thickness. SOLUTION: The method of depositing a film by a sputtering method or the like where raw material particles are flown onto a substrate to deposit a film is provided with, in particular, a means of controlling/managing a film thickness in the process of film deposition, and a means of stopping the working so that the working is ended when the controlled deposition film obtains a prescribed objective film thickness. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004115852(A) 申请公布日期 2004.04.15
申请号 JP20020279373 申请日期 2002.09.25
申请人 CANON INC 发明人 SUZUKI MASATAKA
分类号 G02B1/10;C23C14/34;(IPC1-7):C23C14/34 主分类号 G02B1/10
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