| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film semiconductor device which can improve electrical characteristic and reliability by preventing irregularities from affecting the surface of a substrate to a thin film semiconductor element, and to provide the thin film semiconductor device, an electro-optical device using this thin film semiconductor device as a TFT array substrate, and an electronic apparatus using this electro-optical device. <P>SOLUTION: On the TFT array substrate 10, a base insulating film 11 is formed on the surface of a substrate 10', and a TFT 30 and an accumulation capacity 60 are formed on the surface side of this base insulating film 11. In this case, the base insulating film 11 is a flat film with a thickness of ≥1 μm. Thus, even when the irregularities exist on the surface of the substrate 10' or even when a foreign matter is stuck to the surface of the substrate 10', the TFT 30 and the accumulation capacity 60 are not affected by them. <P>COPYRIGHT: (C)2004,JPO |
