| 摘要 |
PROBLEM TO BE SOLVED: To enhance the heat resistance of a magnetoresistive element utilizing TMR effect, and to suppress Neel effect on the magnetoresistive element utilizing TMR effect. SOLUTION: This magnetoresistive element comprises a first ferromagnetic layer 6 formed of a ferromagnetic material, a non-magnetic and insulating tunnel barrier layer 5 joined to the first ferromagnetic layer 6, a second ferromagnetic layer 4, 13 formed of a ferromagnetic material and joined to the tunnel barrier layer 5, and an antiferromagnetic layer 3 formed of an antiferromagnetic material. The second ferromagnetic layer 4, 13 is positioned between the tunnel barrier layer 5 and the antiferromagnetic layer 3. The normal drawn perpendicularly to the surface of the second ferromagnetic layer 4, 13 from any point on that surface passes through at least two of the crystalline grains constituting the second ferromagnetic layer 4, 13. COPYRIGHT: (C)2004,JPO
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