| 摘要 |
PROBLEM TO BE SOLVED: To maintain a gate breakdown voltage and at the same time to reduce the distance between a gate electrode and a channel layer. SOLUTION: An HEMT has an i-InAlAs buffer layer 2, an i-InGaAs channel alyer 3, an i-InAlAs spacer layer 4, aδ-dope sheet 5, a barrier layer 6, and an n-InGaAs cap layer 7 that are sequentially formed on an InP substrate 1, and a drain electrode 8 as well as a source electrode 8 that are formed on the n-InGaAs cap layer 7. A gate electrode 11 of the HEMT is formed while passing through the barrier layer 6 and theδ-dope sheet 5 to reach the i-InAlAs spacer layer 4, thus maintaining the gate breakdown voltage, at the same time, reducing the distance between the gate electrode and the channel layer, and achieving the HEMT having high channel aspect ratio even if a gate length is short. COPYRIGHT: (C)2004,JPO
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