| 摘要 |
PROBLEM TO BE SOLVED: To measure the thickness of a film for a substrate in a real time in an etching device employing treating solution. SOLUTION: In the etching device wherein the treating solution 95 is reserved in a vessel 21 to apply etching on the substrate 9 by dipping the substrate 9 into the treating solution 95, a light source unit 34 for emitting illumination light, a measuring head 31 for emitting the illumination light against the substrate 9 and inputting reflection light from the substrate 9, a spectroscope 35 for obtaining the spectral intensity of the reflection light, and a comparing unit 411 for obtaining the spectral reflection rate of the reflection light to compare the same with a reference spectral reflection rate, are provided. Upon measuring, the incidental unit 311 on the tip end of the measuring head 31 is brought into a condition that the same is contacted with the treating solution 95. According to this method, the reflection light from the substrate 9 can be stably obtained and the thickness of the film on the substrate 9 during treatment can be measured optimally whereby the strict management of various conditions of the treating solution 95 becomes unnecessary. COPYRIGHT: (C)2004,JPO
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