CRYSTALLINE THIN FILM, METHOD FOR FORMING SAME, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To form a crystalline thin film of long or large crystal grains having high carrier mobility.

SOLUTION: The method for forming the crystalline thin film includes the processes of forming a lowheat-conduction part (2) on the substrate (1) which has smaller heat conductivity than a substrate (1), forming a non-single-crystal thin film (4) on the region where the lowheat-conduction part (2) is formed, and forming the crystalline thin film by crystallizing the non-single-crystal thin film (4) by irradiating the non-single-crystal thin film (4) with an energy beam (5). Here, the non-single-crystal thin film (4) is irradiated with the energy beam (5) entirely at least in one direction, and the energy intensity of the energy beam (5) is larger at the circumferential part of the energy beam (5) in one direction than at the center part.

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