| 摘要 |
A CMOS image sensor is disclosed which has a photodiode formed by implanting ions into an area of a substrate. The photodiode surface area corresponds to about 15% to 40% of the surface area of a photoreceptor part region of the sensor. Thus, the capacitance associated with the photodiode is reduced relative to prior art photodiodes, and, thus, the output signals generated by the detected light are increased. Further, by reducing the size of the photodiode in manufacturing the CMOS image sensor, the junction region is reduced to thereby improve the absorption efficiency of light and high integration of the CMOS image sensor can be achieved to thereby prevent deterioration of device characteristics.
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