| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III-V nitride-based compound layer which has improved qualities and simplifies its manufacturing process; and a substrate using the same. SOLUTION: A first growth layer 21 is grown on a base 10 for growing so that the growth rate in the perpendicular direction to the growth face is >10μm/h. Then, a second growth layer 22 is grown so that the growth rate in the perpendicular direction to the growth face is≤10μm/h. Although the surface of the first growth layer 21 becomes coarse, the surface dimples of the first growth layer 21 are filled up by causing the second growth layer 22 to grow more slowly than the first growth layer 21; thus, the surface of the second growth layer 22 is made flat. Since the second growth layer 22 is grown laterally so as to fill up the dimples of the first grown layer 21, dislocation D transferred from the first growing layer 21 bends laterally at the surface projections, thereby remarkably reducing the density of dislocations D propagated to the surface of the second growth layer 22. COPYRIGHT: (C)2004,JPO
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