发明名称 |
Field effect transistor includes doped island below channel region in semiconductor of opposite conductivity, separated from contact regions |
摘要 |
Below the channel region (8) of the field effect transistor, a doped island (6) is located. Compared with the channel region, this has an opposite conductivity and is separate from the contact regions. An Independent claim is included for the method of manufacture.
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申请公布号 |
DE10245575(A1) |
申请公布日期 |
2004.04.15 |
申请号 |
DE20021045575 |
申请日期 |
2002.09.27 |
申请人 |
ZENTR MIKROELEKT DRESDEN GMBH |
发明人 |
WIRBELEIT FRANK |
分类号 |
H01L29/10;(IPC1-7):H01L29/788;H01L29/772;H01L21/335 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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