发明名称 MASK, MANUFACTURING METHOD OF THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a mask and a manufacturing method of the same for suppressing increase of manufacturing processes, etc. <P>SOLUTION: The mask comprises a first area 10 including a first peripheral part at which a halftone film 102 or a laminated film of the halftone film 102 and a light shield film 103 is formed on a translucent substrate 101 and a first opening part surrounded by the first peripheral part; and a second area 20 including a second peripheral part at which the halftone film 102 is formed on the translucent substrate 101 and a second opening part surrounded by the second peripheral part, and is configured to form a translucent film 106 on at least a portion of the second opening part and generate a prescribed phase difference between an exposure light passing through an area corresponding to a portion at which a translucent film of the second opening part and an exposure light passing through the second peripheral part. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004117728(A) 申请公布日期 2004.04.15
申请号 JP20020279742 申请日期 2002.09.25
申请人 TOSHIBA CORP 发明人 DEWA KYOKO;KANAI HIDEKI;INOUE SOICHI;KANEMITSU SHINGO;ITO SHINICHI
分类号 G03F1/26;G03F1/38;G03F7/20;G03F9/00;G03F9/02;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/26
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