发明名称 |
MASK, MANUFACTURING METHOD OF THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask and a manufacturing method of the same for suppressing increase of manufacturing processes, etc. <P>SOLUTION: The mask comprises a first area 10 including a first peripheral part at which a halftone film 102 or a laminated film of the halftone film 102 and a light shield film 103 is formed on a translucent substrate 101 and a first opening part surrounded by the first peripheral part; and a second area 20 including a second peripheral part at which the halftone film 102 is formed on the translucent substrate 101 and a second opening part surrounded by the second peripheral part, and is configured to form a translucent film 106 on at least a portion of the second opening part and generate a prescribed phase difference between an exposure light passing through an area corresponding to a portion at which a translucent film of the second opening part and an exposure light passing through the second peripheral part. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2004117728(A) |
申请公布日期 |
2004.04.15 |
申请号 |
JP20020279742 |
申请日期 |
2002.09.25 |
申请人 |
TOSHIBA CORP |
发明人 |
DEWA KYOKO;KANAI HIDEKI;INOUE SOICHI;KANEMITSU SHINGO;ITO SHINICHI |
分类号 |
G03F1/26;G03F1/38;G03F7/20;G03F9/00;G03F9/02;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|