发明名称 Heteroepitaxial diamond and diamond nuclei precursors
摘要 A process for growing by chemical vapor deposition a heteroepitaxial single crystal diamond is disclosed. The process provides a substrate which enables the growth of single crystal diamond which is vapor coated on an iridium film. An intermediate process for producing a composite composition with diamond nuclei is also described. Further described are composite compositions of metal oxide, iridium and single crystal diamond films or diamond nuclei. Single crystal diamond is useful in a variety of electronics and acoustics fields.
申请公布号 US2004069209(A1) 申请公布日期 2004.04.15
申请号 US20030634908 申请日期 2003.08.05
申请人 BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY 发明人 GOLDING BRAGE;BEDNARSKI-MEINKE CONNIE;DAI ZHONG-NING
分类号 C30B25/10;(IPC1-7):C30B1/00 主分类号 C30B25/10
代理机构 代理人
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