发明名称 SUBSTRATE WITH INK ACCEPTING LAYER AND RECORDING FILM USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate with an ink accepting layer which is excellent in water resistance of characters and images or the like formed by ink and can be formed below 150&deg;C. <P>SOLUTION: The substrate with an ink accepting layer has at least one peak in an X-ray diffraction pattern, and the diffraction angle (2&theta;) of at least one peak has a layer containing a micelle-containing inorganic oxide (C) represented by the formula, 2&theta;=2sin<SP>-1</SP>(&lambda;/2d). In the formula, &lambda; is a K&alpha; 1 wavelength (nm) of a characteristic X ray, and (d) is a lattice spacing of 0.8 nm to 150 nm. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004114679(A) 申请公布日期 2004.04.15
申请号 JP20030312189 申请日期 2003.09.04
申请人 SANYO CHEM IND LTD 发明人 KAN SHU;ARAKI FUMIKAZU
分类号 B41J2/01;B41M5/00;B41M5/50;B41M5/52 主分类号 B41J2/01
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