发明名称 COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a means which easily improves light-emitting output of a compound semiconductor light-emitting element. <P>SOLUTION: The compound semiconductor light-emitting element 1 is so constituted that it has a double-heterostructure, by sandwiching both sides of a light-emitting layer 2 with clad layers 3, 4 and the area of the light-emitting layer 2 is smaller than that of the clad layers 3, 4 in a state viewed from the laminating direction of the light-emitting layer 2 and the clad layers 3, 4. The compound semiconductor light-emitting element 1 is manufactured, by selectively etching the peripheral edge part of the light-emitting layer 2, after dicing. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004119949(A) 申请公布日期 2004.04.15
申请号 JP20020285297 申请日期 2002.09.30
申请人 DOWA MINING CO LTD 发明人 SUNAJI NAOYA;WATANABE HARUHIKO
分类号 H01L21/306;H01L33/30 主分类号 H01L21/306
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