SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To prevent a capacitor insulating film 108 from being broken by the sharp edge by dishing generated in CMP treatment or the like when forming a lower electrode 106 in an MIM capacitor. SOLUTION: The lower electrode 106 of the MIM capacitor is formed on a first insulating film 102 that is formed on a semiconductor substrate represented by a silicon substrate and is made of silicon oxide. Then, a leak preventing film 122 comprising the insulating film is formed while covering the edge of the lower electrode 106. Additionally, the capacitor insulating film 108 of the MIM capacitor made of silicon nitride is formed on the lower electrode 106 and in the leak preventing film 122. Then, an upper electrode 114 being larger than the lower electrode 106 is formed while opposing the lower electrode 106 via the capacitor insulating film 108. COPYRIGHT: (C)2004,JPO