发明名称 |
Recessed gate electrode MOS transistors having a substantially uniform channel length across a width of the recessed gate electrode and methods of forming same |
摘要 |
A transistor can include an integrated circuit substrate including spaced apart isolation regions therein and an active region therebetween. A recess is formed in the active region and extends between the spaced apart isolation regions and has a bottom and opposing side wall ends that are defined by facing portions of the spaced apart isolation regions. An electrically insulating layer is formed on the bottom of the recess. A conductive material is formed in the recess on the electrically insulating layer to provide a gate electrode.
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申请公布号 |
US2004072412(A1) |
申请公布日期 |
2004.04.15 |
申请号 |
US20030449640 |
申请日期 |
2003.06.02 |
申请人 |
KIM JI-YOUNG |
发明人 |
KIM JI-YOUNG |
分类号 |
H01L21/76;H01L21/336;H01L29/10;(IPC1-7):H01L21/824;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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