发明名称 MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE MEMORY
摘要 <p>A magnetic memory, comprising a substrate, a magnetic element lower part, a magnetic element upper part, and a side wall insulation film, wherein the magnetic element lower part is a part of a magnetic element installed on the upper surface of the substrate, the magnetic element upper part is the remaining part of the magnetic element installed on the upper surface of the magnetic element lower part, and the side wall insulation film is installed so as to surround the magnetic element upper part and formed of an insulation body, namely, the magnetic element lower part is one or a plurality of layers nearer the substrate among a plurality of laminated films forming the magnetic element in the magnetic element installed on the upper surface of the substrate and the magnetic element upper part is those layers other than the magnetic element lower part installed on the upper surface of the magnetic element lower part among the plurality of laminated films forming the magnetic element, and the side surface of the magnetic element upper part is electrically insulated from the other portions by the side wall insulation film, namely, a shortcircuit can be avoided.</p>
申请公布号 WO2004032237(A1) 申请公布日期 2004.04.15
申请号 WO2003JP11956 申请日期 2003.09.19
申请人 NEC CORPORATION;SUEMITSU, KATSUMI;KIKUTA, KUNIKO 发明人 SUEMITSU, KATSUMI;KIKUTA, KUNIKO
分类号 H01L27/105;H01L21/8246;H01L27/22;H01L43/08;H01L43/12;(IPC1-7):H01L27/105 主分类号 H01L27/105
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