摘要 |
<p>A magnetic memory, comprising a substrate, a magnetic element lower part, a magnetic element upper part, and a side wall insulation film, wherein the magnetic element lower part is a part of a magnetic element installed on the upper surface of the substrate, the magnetic element upper part is the remaining part of the magnetic element installed on the upper surface of the magnetic element lower part, and the side wall insulation film is installed so as to surround the magnetic element upper part and formed of an insulation body, namely, the magnetic element lower part is one or a plurality of layers nearer the substrate among a plurality of laminated films forming the magnetic element in the magnetic element installed on the upper surface of the substrate and the magnetic element upper part is those layers other than the magnetic element lower part installed on the upper surface of the magnetic element lower part among the plurality of laminated films forming the magnetic element, and the side surface of the magnetic element upper part is electrically insulated from the other portions by the side wall insulation film, namely, a shortcircuit can be avoided.</p> |