| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon-containing polymerizable compound for a raw material of a base resin of a chemically amplifying positive type resist material used for micro-fabrication process in a manufacturing process for a semiconductor element or the like, its production process and a polymer compound using it, a suitable resist material when high energy rays such as far ultra-violet rays, KrF and ArF excimer laser lights (248 and 193 nm respectively), electron beams and X-rays are used as light exposure sources, particularly a chemical amplifying positive type resist material and a method for forming a pattern. <P>SOLUTION: The silicon-containing polymerizable compounds are shown by general formula (1) wherein R<SP>1</SP>represents H or a halogen atom or a monovalent organic group and are excellent materials for double layered resist base resin. The resist material is sensitive to the high energy rays with excellent sensitivity to waves of 300 nm or less, resolution, and resistant to oxygen plasma etching. Thus, the polymer compounds and the resist materials are capable to provide excellent double layered resist material forming a fine vertical pattern to the base plate and suitable for a fine pattern forming material for production of an ultra-LSI. <P>COPYRIGHT: (C)2004,JPO |
