| 发明名称 |
Polycrystalline MgO deposition material having adjusted Si concentration |
| 摘要 |
<p>The polycrystalline magnesia deposition material includes a sintered pellet of polycrystalline magnesia with a magnesia purity of more than 99.9 percent and a relativity of more than 99.9 percent. A silicon concentration in the polycrystalline magnesia deposition material ranges between 30 and 500 ppm. Independent claims are also included for the following: (a) a plasma display panel; and (b) a display unit.</p> |
| 申请公布号 |
EP1408528(A2) |
申请公布日期 |
2004.04.14 |
| 申请号 |
EP20030256413 |
申请日期 |
2003.10.10 |
| 申请人 |
LG ELECTRONICS INC.;MITSUBISHI MATERIALS CORPORATION |
发明人 |
PARK, EUNG CHUL;SAKURAI, HIDEAKI;KUROMITSU, YOSHIRO;TOYOGUCHI, GINJIRO |
| 分类号 |
C04B35/053;C23C14/08;C23C14/24;H01J11/12;H01J11/22;H01J11/24;H01J11/26;H01J11/34;H01J11/40;(IPC1-7):H01J17/02 |
主分类号 |
C04B35/053 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
