| 摘要 |
A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. The crucible includes a plurality of tungsten grains and a wall thickness of at least about 1.5 times the average tungsten grain size. In particular embodiments, the crucible includes first and second layers of tungsten grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be machined from a bar, plate, or billet of powder metallurgy tungsten.
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