| 摘要 |
A SOI semiconductor device comprises a resistor body which is formed of a top semiconductor layer in a SOI substrate having an embedded dielectric film and the top semiconductor layer formed on the embedded dielectric film and which is dielectrically isolated by an insulating film, wherein a resistance value of the resistor body is set to be a predetermined value by the concentration of impurities contained in the top semiconductor layer and by the dimension of the resistor body.
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