METHOD FOR FABRICATING POLY CRYSTAL SILICON THIN FILM TRANSISTORS

摘要

PURPOSE: A method for fabricating poly crystal silicon thin film transistors is provided to restrain the growth of poly silicon grains in a liquid phase area of a silicon layer corresponding to a short side of a slit pattern, thereby preventing the ununiform growth of the poly silicon grains. CONSTITUTION: A method for fabricating poly crystal silicon thin film transistors includes a poly silicon mask(300) having first and second horizontal slit areas(301,302) defining transmission areas(310). All slit patterns in the first and second horizontal slit are extend traversely and are aligned with the same interval in the longitudinal direction. The slit patterns of the first and second horizontal slit areas are aligned missing each other by a pitch. When radiating laser beams while moving the mask in the traverse direction, amorphous silicon neighboring each other in the longitudinal direction are continuously radiated with the laser beams for the growth of silicon grains by the width of the slits. Since the slit patterns are aligned in two or mores areas, the size of the grains becomes controllable as desired.