Quantum well device with ESD endurance and method of forming the same

摘要

The present invention provides a quantum well device and a method of forming the same. The quantum well device comprises alternately stacked n layers of quantum well layers and n layers of barrier layers, wherein the quantum well layers and barrier layers are alternatively doped with dopant, and n is a positive integer. The dopant of a predetermined concentration is applied to control the breakdown voltage and output intensity of the quantum well device and to consequently avoid artificial and mechanical ESD failure.