| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thick group III nitride compound semiconductor substrate free from warps and cracks. SOLUTION: An Al<SB>0.2</SB>Ga<SB>0.8</SB>N layer 2 having a film thickness of 0.2-0.3μm and a GaN layer 3 having the film thickness of 0.5μm are formed (b) on the upper surface of a silicon (Si) substrate 1 (a) in sequence. The resulting material is placed in a halide VPE apparatus capable of independently etching with gaseous HCl from the rear face, and the silicon substrate 1, the Al<SB>0.2</SB>Ga<SB>0.8</SB>N layer 2, and the GaN layer 3 are removed from the rear face by gas etching while epitaxially growing a GaN layer 10 on the GaN layer 3 by the halide vapor phase deposition (c) at 900°C. After forming the GaN layer 10 (d) having a film thickness of about 50μm, the GaN layer 10 is removed from the rear face by gas etching while epitaxially growing a GaN layer 20 on the GaN layer 10 at 1,050°C by the halide vapor phase deposition (e). Finally, the substrate consisting of the GaN layer 20 having the film thickness of 200μm and free from warps and cracks is obtained. COPYRIGHT: (C)2004,JPO
|
