发明名称 |
APPARATUS AND METHOD OF USING THIN FILM MATERIAL AS DIFFUSION BARRIER FOR METALLIZATION |
摘要 |
A semiconductor device (10) has a silicon substrate (12) with first and second transistors formed in the substrate. A copper interconnect (20) is coupled between an active region (14) of the first transistor and an active region (16) of the second transistor. A barrier layer (24) is disposed under the copper interconnect. The barrier layer contains titanium, aluminum, nitrogen, and oxygen with of composition ratio given as TiwAlxNyOZ, where w=1, x=1.40.5, y=3.0±0.3, and z=1.0±0.2. The barrier layer limits migration of copper into the silicon. A silicide region (18) is formed in the active regions of the first and second transistors and makes electrical contact with the copper interconnect. A portion of the barrier layer resides between the copper interconnect and the silicide region. An oxide layer (22) is disposed between the copper interconnect and the substrate. A portion of the barrier layer resides between the copper interconnect and the substrate. |
申请公布号 |
WO2004030039(A2) |
申请公布日期 |
2004.04.08 |
申请号 |
WO2003US30244 |
申请日期 |
2003.09.24 |
申请人 |
ARIZONA BOARD OF REGENTS ACTING FOR AN ON BEHALF OF, ARIZONA STATE UNIVERSITY |
发明人 |
KIM, HYUNCHUL, C.;ALFORD, TERRY, L. |
分类号 |
H01L21/285;H01L21/768;H01L23/532 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|