Production of a semiconductor component used as a MOSFET comprises preparing a channel zone layer, forming a recess in the first channel zone layer, filling the recess with a recombination zone, and applying a further channel zone layer

摘要

Production of a semiconductor component comprises preparing a first channel zone layer (21), forming a first recess (23A) in the first channel zone layer, forming a recombination zone (30) to fill the recess, and applying a second channel zone layer on the first channel zone layer and the recombination zone.