发明名称 |
Acicular silicon crystal and process for producing the same |
摘要 |
By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular silicon crystal having a substantial cone shape tapered so as to have a radius of curvature of not less than 1 nm to no more than 20 nm at its tip end and having a diameter of bottom surface of not less than 10 nm, and a height equivalent to or more than the diameter of bottom surface, at a desired location. |
申请公布号 |
AU2003261940(A8) |
申请公布日期 |
2004.04.08 |
申请号 |
AU20030261940 |
申请日期 |
2003.09.04 |
申请人 |
TECHNO NETWORK SHIKOKU CO.,LTD;TOSHIBA CERAMICS CO., LTD |
发明人 |
HIROAKI KANAKUSA;SHINICHI KAWAGOE;AKIMITSU HATTA;HIROAKI YOSHIMURA;KEIICHI ISHIMOTO |
分类号 |
B01J37/02;B01J23/745;C23C16/04;C23C16/24;C30B25/00;C30B29/62;H01J9/02;(IPC1-7):C30B29/62 |
主分类号 |
B01J37/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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