| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film photoelectric converter which is easy to produce and has high conversion efficiency. <P>SOLUTION: A first thin-film photoelectric conversion device 20 consists of a first translucent conductive layer 12, a first one-conduction silicon-based semiconductor layer 21, an amorphous silicon-based semiconductor layer 22 which is intrinsical substantially, a first inverse-conduction silicon-based semiconductor layer 23, and a second translucent conductive layer 30 in order on a translucent substrate 11. A second thin-film photoelectric conversion device 70 consists of a second one-conduction silicon-based semiconductor layer 71, a crystalline silicon-based semiconductor layer 72 which has surface unevenness of columnar growth which is intrinsical substantially, a second inverse-conduction silicon-based semiconductor layer 73, and a third translucent conductive layer 80 in order on a conductive substrate 60 being a second substrate or on an insulation substrate 50 being the second substrate provided with a conductive layer 61. Further, a close contact layer 90 between both of the devices consists of a gaseous layer 92 for thermal insulation and a translucent resin layer 91. <P>COPYRIGHT: (C)2004,JPO</p> |
