| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a silicon photovoltaic device which improves the electrical characteristics of a p-layer and an n-layer and has good photoelectric conversion characteristic, and to provide a method for manufacturing the same. <P>SOLUTION: The silicon photovoltaic device 10 having a metal oxide transparent electrode layer 2, a crystalline p-type semiconductor layer 3, a microcrystal photoelectric conversion layer 4 intrinsical substantially, a crystalline n-type semiconductor layer 5, and a rear surface electrode layer 6 contacting in order on a translucent substrate 1 is thermally treated in the atmosphere with oxygen partial pressure of≤133 Pa. Otherwise, a silicon photovoltaic device having a metal oxide transparent electrode layer, an amorphous p-type semiconductor layer, an amorphous photoelectric conversion layer intrinsical substantially, an amorphous n-type semiconductor layer, a crystalline p-type semiconductor layer, a microcrystalphotoelectric conversion layer intrinsical substantially, a crystalline n-type semiconductor layer and a rear surface electrode layer contacting in order on a translucent substrate is thermally treated in the atmosphere with oxygen partial pressure of≤133 Pa. <P>COPYRIGHT: (C)2004,JPO</p> |
