发明名称 METHOD FOR EVALUATING DEFECT ON SURFACE OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To specify the cause of defects on the surface of a semiconductor wafer and to precisely evaluate the semiconductor wafer. SOLUTION: The defect on the surface of the semiconductor wafer is detected before a semiconductor wafer processing. A position of the defect is obtained as position information and the image of the defect is obtained as pre-processing image information. The semiconductor wafer processing is performed, and the image of a part, where the defect exists before the semiconductor wafer processing, is obtained as post-processing image information, based on position information obtained before the semiconductor wafer processing. The images before and after the semiconductor wafer processing at the same point on the surface of the semiconductor wafer are obtained. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004111733(A) 申请公布日期 2004.04.08
申请号 JP20020273572 申请日期 2002.09.19
申请人 KOMATSU ELECTRONIC METALS CO LTD 发明人 TAJIRI TOMOAKI;MIYOSHI KOSUKE;KANDA TAKAHIRO;MATSUMOTO KEI;SHIMADA YASUHIRO
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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