| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including a nonvolatile storage having resistance for deterioration during writing and deleting of data. <P>SOLUTION: The method for manufacturing the semiconductor device includes a memory region 1000 in which the nonvolatile storage constitutes a memory array arranged in the form of a matrix. The method for manufacturing the semiconductor device forms a first gate insulating layer 12 upward of a semiconductor substrate 10, forms a first conductive word gate 14 and a stopper layer, forms a first insulating layer 22 and a second conductive layer, forms a first side wall conductive layer by anisotropically etching the second conductive layer, forms a third conductive layer on the whole face of the memory region, forms a second side wall conductive layer 242 by performing anisotropical etching, and forms control gates 20 and 30 by isotropically etching the first and second conductive layers. <P>COPYRIGHT: (C)2004,JPO</p> |
