发明名称 HEAT-TREATING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a heat-treating apparatus having a substrate support which suppresses a rub between the substrate support body and a substrate to reduce flaws, a slip, and further curvature, and a method for manufacturing a semiconductor device. SOLUTION: The substrate support body 30 has a ring-shaped plate 72 provided to a main body part and a support part 54 is suspended from a cut 74 formed in the plate 72. This support part 54 has a spherical fulcrum 62 and a hook part 64 and freely swings on the plate 72 around the spherical fulcrum 62. The substrate is mounted on the hook part 64 and even if the substrate deforms owing to heat stress, the support part 54 which freely swings can absorb that. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004111475(A) 申请公布日期 2004.04.08
申请号 JP20020268882 申请日期 2002.09.13
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YAMAZAKI YOSHINOBU;SHIMADA TOMOHARU;ISHIGURO KENICHI;MOROHASHI AKIRA
分类号 H01L21/22;H01L21/31;H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/22
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