Method of cleaning a silicon, carbon, germanium, tin or lead surface

摘要

Metal impurities under the surface of a group IV element are removed to purify and flatten the surface. Such a method for purifying an Si, C, Ge, Sn or Pb surface having metal impurities under said surface comprises (I) hydrogenating the surface in the gas phase or liquid phase to thereby extracting the metal impurities onto the surface; and (II) removing the metal impurities.