| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to enhance the surface area of electrodes by depositing the second silicon grain on a hemispherical silicon grain. CONSTITUTION: A lower electrode(21) is formed on a capacitor formation region of a silicon substrate(20). The resultant structure is loaded in a processing chamber and the temperature is risen. The first silicon grain is deposited on the surface of the lower electrode. By annealing the resultant structure, a hemispherical silicon grain(22a) is grown on the surface of the lower electrode. The second silicon grain(24) is deposited on the surface of the hemispherical silicon grain(22a). Phosphorous(25) is doped in the hemispherical silicon grain. Then, a dielectric film and an upper electrode are sequentially formed on the resultant structure.
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