发明名称 Ferrite film formation method
摘要 A ferrite layer formation process that may be performed at a lower temperature than conventional ferrite formation processes. The formation process may produce highly anisotropic structures. A ferrite layer is deposited on a substrate while the substrate is exposed to a magnetic field. An intermediate layer may be positioned between the substrate and the ferrite to promote bonding of the ferrite to the substrate. The process may be performed at temperatures less than 300° C. Ferrite film anisotropy may be achieved by embodiments of the invention in the range of about 1000 dyn-cm/cm<3 >to about 2x10<6 >dyn-cm/cm<3>.
申请公布号 US6716488(B2) 申请公布日期 2004.04.06
申请号 US20010887938 申请日期 2001.06.22
申请人 AGERE SYSTEMS INC. 发明人 FLEMING DEBRA ANNE;GRADER GIDEON S.;JOHNSON, JR. DAVID WILFRED;THOMSON, JR. JOHN;VAN DOVER ROBERT BRUCE
分类号 B32B9/00;C03C17/25;C04B41/50;C04B41/87;H01F1/00;H01F41/24;(IPC1-7):H01F1/00 主分类号 B32B9/00
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