| 发明名称 |
Method for making a semiconductor device having a high-k gate dielectric |
| 摘要 |
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate. After removing impurities from that layer, and increasing its oxygen content, a gate electrode is formed on the high-k gate dielectric layer.
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| 申请公布号 |
US6716707(B1) |
申请公布日期 |
2004.04.06 |
| 申请号 |
US20030387303 |
申请日期 |
2003.03.11 |
| 申请人 |
INTEL CORPORATION |
发明人 |
BRASK JUSTIN K.;GLASSMAN TIMOTHY E.;DOCZY MARK L.;METZ MATTHEW V. |
| 分类号 |
H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/336;H01L21/469 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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