| 发明名称 |
MFMOS capacitors with high dielectric constant materials |
| 摘要 |
A MFMOS one transistor memory structure for ferroelectric non-volatile memory devices includes a high dielectric constant material such as ZrO2, HfO2, Y2O3, or La2O3, or the like, or mixtures thereof, to reduce the operation voltage and to increase the memory window and reliability of the device.
|
| 申请公布号 |
US6716645(B2) |
申请公布日期 |
2004.04.06 |
| 申请号 |
US20020319314 |
申请日期 |
2002.12.12 |
| 申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LI TINGKAI;HSU SHENG TENG;YING HONG;ULRICH BRUCE D.;MA YANJUN |
| 分类号 |
H01L21/8247;H01L21/28;H01L21/8246;H01L27/105;H01L29/51;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/8247 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
