Non-volatile semiconductor memory device with cache function and program, read, and page copy-back operations thereof

摘要

A non-volatile memory device according to embodiments of the invention includes a page buffer acting as a sense amplifier during a read operation and as a write driver during a program operation. The page buffer has two sense and latch blocks, which exclusively carry out the same function. While one of the sense and latch blocks carries out a read operation, the other sense and latch block outputs previously sensed data to the exterior. Further, while one of the sense and latch blocks carries out a program operation, the other sense and latch block loads data to be programmed. Due to the page buffer, an operation speed of the non-volatile memory device can be enhanced.