| 摘要 |
A magnetic memory device is capable of raising the upper limit of the current density of wiring, without significantly changing the material, structure, and the like, in order to deal with higher integration of storage elements constituting the magnetic memory device and miniaturization of wiring. With respect to wiring for generating a recording auxiliary magnetic field in the direction of the hard magnetization axis of a storage area of each of the magnetoresistance-effect storage elements, current for generating the magnetic field is controlled to flow bidirectionally. Thus, the current is not fixed in one direction. Consequently, deterioration and breaking due to electromigration is less likely to occur, and increases in the reliability and in the level of density can thus be realized. <IMAGE> |
