SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF BY PERFORMING TILTED ION IMPLANTATION PROCESS ON N-CHANNEL MOS TRANSISTOR REGION

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to be balanced between the characteristics of an n-channel MOS(metal oxide semiconductor) transistor and a p-channel MOS transistor by performing a tilted ion implantation process on an n-channel MOS transistor region. CONSTITUTION: A gate electrode that crosses each of a plurality of active regions defined in a silicon substrate is formed. An extension region of a source/drain is formed in the active region at both sides of the gate electrode. The first and second insulation layers having different etch characteristics are deposited on the silicon substrate wherein the sidewall of the gate electrode is covered. An anisotropic etch process is performed to form a sidewall spacer(20) on the sidewall of each gate electrode. A selective etch process is performed on the first insulation layer of the sidewall spacer. An incoming part from the surface of the second insulation layer is formed in the gate electrode and the silicon substrate. A source/drain region(22,24) is formed in the silicon substrate by an ion implantation using the sidewall spacer as a mask. Metal capable of being silicidized is deposited on the semiconductor substrate and is silicidized to form a silicide region(25).