| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device for shortening an access period of time. SOLUTION: The device is provided with: a memory cell array 5 in which a plurality of memory cells using ferroelectric substance capacitors is arranged; a spare cell array 6; a word line driver 3, in which selection driving is simultaneously started for a word line WL that is connected to a defective memory cell and a spare word line SWL that is connected to the spare memory cell when an access is made to the defective memory cell or the the spare memory cell that is to be used to replace the defective memory cell and then, one selection driving is stopped and the other selection driving is continued; and a spare word line driver 4. COPYRIGHT: (C)2004,JPO
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