| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can sufficiently activate impurities by thermal treatment without giving damage of heat to a substrate and the like, when the different impurities are implanted to a semiconductor film and they are thermally treated. <P>SOLUTION: The manufacturing method of the semiconductor device comprises a process for forming a semiconductor layer 5 on a substrate 1, a process for forming a gate insulating layer 6 on the semiconductor layer 5, a process for forming gate electrodes 13, 14 and 15 on the gate insulating layer 6, a process for implanting two or above types of the impurities to the semiconductor layer 5, and a process for activating the impurities. The impurity activating process comprises a high temperature short time thermal treatment process for performing thermal treatment in a short time at a relatively high temperature, and a low temperature long time thermal treatment process for performing thermal treatment for a long time at a relatively low temperature. <P>COPYRIGHT: (C)2004,JPO</p> |
