METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor single crystal having low dislocation density and the compound semiconductor single crystal. SOLUTION: The crystal-growth with the low dislocation is performed by controlling the concentration of Si and B contained in a seed crystal 4 used for the single crystal growth respectively to 1.0×1017-1.0×1019cm-3and the solidification ratio in a place corresponding to a seeding position to≤0.85 expressed in terms of a solidification ratio in the growth of the seed crystal. COPYRIGHT: (C)2004,JPO