| 摘要 |
PROBLEM TO BE SOLVED: To surely obtain an anisotropic shape in a film to be etched by preventing a resist from being tilted down in a step of etching by using a resist pattern made of a resist material for photosensing via an ArF excimer laser, and to enable a pattern size to be controlled. SOLUTION: A wafer 11 formed with the resist pattern 16 is charged in a dry etching apparatus, and an antireflection film 15 and a silicon nitride film 14 are dry etched with the pattern 16 used as an etching mask. Thus, both a first deposit 107A deposited at the inside of the pattern 16 and a second deposit 17B deposited at its outside are adhered relatively thickly to a center of the wafer 11. As the etching gas at this time, a mixture gas of SF<SB>6</SB>, CHF<SB>3</SB>and Ar is used. COPYRIGHT: (C)2004,JPO |
